STW48N60M2-4 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.65 EUR |
| 30+ | 9.71 EUR |
| 60+ | 8.88 EUR |
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Technische Details STW48N60M2-4 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD, Type of transistor: N-MOSFET, Technology: MDmesh™ M2, Power dissipation: 300W, Case: TO247-4, Mounting: THT, Kind of package: tube, Polarisation: unipolar, Version: ESD, Features of semiconductor devices: Kelvin terminal, Drain current: 26A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±25V, On-state resistance: 60mΩ.
Weitere Produktangebote STW48N60M2-4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STW48N60M2-4 | STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ M2 Power dissipation: 300W Case: TO247-4 Mounting: THT Kind of package: tube Polarisation: unipolar Version: ESD Features of semiconductor devices: Kelvin terminal Drain current: 26A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±25V On-state resistance: 60mΩ |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STW48N60M2-4 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Power dissipation: 300W
Case: TO247-4
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Version: ESD
Features of semiconductor devices: Kelvin terminal
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Power dissipation: 300W
Case: TO247-4
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Version: ESD
Features of semiconductor devices: Kelvin terminal
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±25V
On-state resistance: 60mΩ
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)