STW48N60M2-4 STMicroelectronics
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Technische Details STW48N60M2-4 STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V.
Weitere Produktangebote STW48N60M2-4
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STW48N60M2-4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 42A 4-Pin(4+Tab) TO-247 Tube |
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STW48N60M2-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW48N60M2-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 42A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW48N60M2-4 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 60 mOhm typ 42 A MDmesh M2 Power MOSFET |
Produkt ist nicht verfügbar |
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STW48N60M2-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 26A; 300W Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 300W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; Kelvin terminal |
Produkt ist nicht verfügbar |