STW48N60M6-4 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO247-4 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.8 EUR |
| 10+ | 12.17 EUR |
| 100+ | 10.03 EUR |
| 600+ | 8.92 EUR |
| 1200+ | 8.16 EUR |
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Technische Details STW48N60M6-4 STMicroelectronics
Description: MOSFET N-CH 600V 39A TO247-4, Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Weitere Produktangebote STW48N60M6-4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STW48N60M6-4 | STMicroelectronics |
Description: MOSFET N-CH 600V 39A TO247-4 Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STW48N60M6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 140A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 69mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement Version: ESD Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STW48N60M6-4 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 39A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: MOSFET N-CH 600V 39A TO247-4
Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STW48N60M6-4 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH