STW48N60M6-4 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 140A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 10.61 EUR |
| 10+ | 7.31 EUR |
| 11+ | 6.91 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW48N60M6-4 STMicroelectronics
Description: MOSFET N-CH 600V 39A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V.
Weitere Produktangebote STW48N60M6-4 nach Preis ab 6.91 EUR bis 21.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STW48N60M6-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 140A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 69mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; Kelvin terminal |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
STW48N60M6-4 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 61 mOhm typ 39 A MDmesh M6 Power MOSFET |
auf Bestellung 218 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
STW48N60M6-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 39A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STW48N60M6-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 39A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
STW48N60M6-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 39A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V |
Produkt ist nicht verfügbar |