STW48N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 39A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details STW48N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 39A TO247, Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 69mOhm @ 19.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STW48N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STW48N60M6 | STMicroelectronics |
MOSFETs N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 package |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STW48N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 65mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW48N60M6 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 package
MOSFETs N-channel 600 V, 61 mOhm typ., 39 A MDmesh M6 Power MOSFET in a TO-247 package
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STW48N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 160A; 300W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Pulsed drain current: 160A
Power dissipation: 300W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH