
STW50N65DM2AG STMicroelectronics

Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 594 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 8.76 EUR |
30+ | 5.62 EUR |
510+ | 5.33 EUR |
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Technische Details STW50N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STW50N65DM2AG nach Preis ab 5.90 EUR bis 9.26 EUR
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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auf Bestellung 763 Stücke: Lieferzeit 10-14 Tag (e) |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Drain-source voltage: 650V Drain current: 24A On-state resistance: 70mΩ Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Drain-source voltage: 650V Drain current: 24A On-state resistance: 70mΩ Polarisation: unipolar |
Produkt ist nicht verfügbar |