STW50N65DM2AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.74 EUR |
| 30+ | 13.36 EUR |
| 120+ | 11.95 EUR |
| 510+ | 10.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW50N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STW50N65DM2AG nach Preis ab 9.13 EUR bis 16.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STW50N65DM2AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
STW50N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 38A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STW50N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 38A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
STW50N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
STW50N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 38A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
STW50N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |