
STW50N65DM2AG STMicroelectronics

MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET
auf Bestellung 732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 6.2 EUR |
25+ | 5.93 EUR |
100+ | 5.7 EUR |
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Technische Details STW50N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STW50N65DM2AG nach Preis ab 5.08 EUR bis 6.37 EUR
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STW50N65DM2AG | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Drain-source voltage: 650V Drain current: 24A On-state resistance: 70mΩ Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW50N65DM2AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; 300W; TO247 Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Drain-source voltage: 650V Drain current: 24A On-state resistance: 70mΩ Polarisation: unipolar |
Produkt ist nicht verfügbar |