STW50N65DM6

STW50N65DM6 STMicroelectronics


stw50n65dm6.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 52500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 Long Leads
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STW50N65DM6 STMicroelectronics

Description: MOSFET N-CH 650V 33A TO247-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 52500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 4.75V @ 250µA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), FET Type: N-Channel.

Weitere Produktangebote STW50N65DM6

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STW50N65DM6 Hersteller : STMicroelectronics stw50n65dm6.pdf MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-247 package
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STW50N65DM6 Hersteller : STMicroelectronics stw50n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 21A; Idm: 120A
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 91mΩ
Gate-source voltage: ±25V
Drain current: 21A
Pulsed drain current: 120A
Technology: MDmesh™ DM6
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH