STW56N60M2-4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
| Anzahl | Preis |
|---|---|
| 2+ | 15.31 EUR |
| 30+ | 9.03 EUR |
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Technische Details STW56N60M2-4 STMicroelectronics
Description: MOSFET N-CH 600V 52A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 26A, 10V, Power Dissipation (Max): 350W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V.
Weitere Produktangebote STW56N60M2-4 nach Preis ab 7.52 EUR bis 15.51 EUR
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STW56N60M2-4 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 45 mOhm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package |
auf Bestellung 388 Stücke: Lieferzeit 10-14 Tag (e) |
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