STW56N65DM2 STMicroelectronics
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.20 EUR |
| 10+ | 15.59 EUR |
| 25+ | 11.42 EUR |
| 100+ | 10.17 EUR |
| 250+ | 10.16 EUR |
| 600+ | 10.03 EUR |
| 1200+ | 9.82 EUR |
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Technische Details STW56N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V.
Weitere Produktangebote STW56N65DM2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STW56N65DM2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 48A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW56N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW56N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW56N65DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW56N65DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW56N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |