STW56N65M2-4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
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Technische Details STW56N65M2-4 STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V, Power Dissipation (Max): 358W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V.
Weitere Produktangebote STW56N65M2-4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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STW56N65M2-4 | Hersteller : STMicroelectronics |
MOSFETs N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 packag |
Produkt ist nicht verfügbar |
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| STW56N65M2-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
