
STW57N65M5-4 STMicroelectronics

Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Features of semiconductor devices: Kelvin terminal
Technology: MDmesh™ V
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
5+ | 17.50 EUR |
7+ | 10.32 EUR |
8+ | 9.75 EUR |
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Technische Details STW57N65M5-4 STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V.
Weitere Produktangebote STW57N65M5-4 nach Preis ab 9.75 EUR bis 17.50 EUR
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STW57N65M5-4 | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 56mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Features of semiconductor devices: Kelvin terminal Technology: MDmesh™ V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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STW57N65M5-4 | Hersteller : STMicroelectronics |
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STW57N65M5-4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics |
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Produkt ist nicht verfügbar |