STW57N65M5-4 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate; Kelvin terminal
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 15.1 EUR |
10+ | 14.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW57N65M5-4 STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V.
Weitere Produktangebote STW57N65M5-4 nach Preis ab 14.51 EUR bis 15.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||
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STW57N65M5-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Power dissipation: 250W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 56mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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STW57N65M5-4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 42A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 42A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 42A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 42A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW57N65M5-4 | Hersteller : STMicroelectronics | MOSFET N-chanel 650 V 0.056 Ohm typ 42 A |
Produkt ist nicht verfügbar |