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STW57N65M5-4

STW57N65M5-4 STMicroelectronics

STW57N65M5-4-DTE.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 26.5A; 250W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ V
Features of semiconductor devices: Kelvin terminal
Version: ESD
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Technische Details STW57N65M5-4 STMicroelectronics

Description: MOSFET N-CH 650V 42A TO247-4L, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-4L, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Package / Case: TO-247-4, Packaging: Tube, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Vgs(th) (Max) @ Id: 5V @ 250µA, Mounting Type: Through Hole.

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STW57N65M5-4 STW57N65M5-4 Hersteller : STMicroelectronics en.DM00082709.pdf Description: MOSFET N-CH 650V 42A TO247-4L
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Package / Case: TO-247-4
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Vgs(th) (Max) @ Id: 5V @ 250µA
Mounting Type: Through Hole
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STW57N65M5-4 STW57N65M5-4 Hersteller : STMicroelectronics stw57n65m5_4-1852197.pdf MOSFETs N-chanel 650 V 0.056 Ohm typ 42 A
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