STW58N65DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFET Automotive-grade N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
auf Bestellung 19 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 27.12 EUR |
| 10+ | 23.89 EUR |
| 25+ | 23.27 EUR |
| 50+ | 21.94 EUR |
| 100+ | 20.67 EUR |
| 250+ | 20.02 EUR |
| 600+ | 18.77 EUR |
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Technische Details STW58N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V.
Weitere Produktangebote STW58N65DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW58N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 150A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW58N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STW58N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 150A; 360W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 150A Power dissipation: 360W Case: TO247 Gate-source voltage: ±25V On-state resistance: 58mΩ Mounting: THT Gate charge: 88nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |