STW58N65DM2AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
| Anzahl | Preis |
|---|---|
| 1+ | 15.4 EUR |
| 10+ | 13.69 EUR |
| 100+ | 12.43 EUR |
| 600+ | 9.4 EUR |
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Technische Details STW58N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Qualification: AEC-Q101, Grade: Automotive, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 360W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 48A TO247 Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
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