STW58N65DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.04 EUR |
| 10+ | 14.22 EUR |
| 100+ | 12.3 EUR |
| 600+ | 9.89 EUR |
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Technische Details STW58N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STW58N65DM2AG
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW58N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 48A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW58N65DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |