STW65N023M9-4 STMicroelectronics
auf Bestellung 27 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 51.95 EUR |
| 10+ | 47.89 EUR |
| 30+ | 45.76 EUR |
| 120+ | 40.9 EUR |
| 270+ | 39 EUR |
| 510+ | 37.13 EUR |
| 1020+ | 34.97 EUR |
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Technische Details STW65N023M9-4 STMicroelectronics
Description: N-CHANNEL 650 V, 19.9 MOHM TYP.,, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 48A, 10V, Power Dissipation (Max): 463W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8844 pF @ 400 V.
Weitere Produktangebote STW65N023M9-4 nach Preis ab 51.51 EUR bis 55.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STW65N023M9-4 | Hersteller : STMicroelectronics |
 Description: N-CHANNEL 650 V, 19.9 MOHM TYP.,Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 48A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.2V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8844 pF @ 400 V |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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