STW65N023M9-4 STMicroelectronics

Description: N-CHANNEL 650 V, 19.9 MOHM TYP.,, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 48A, 10V, Power Dissipation (Max): 463W (Tc), Vgs(th) (Max) @ Id: 4.2V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8844 pF @ 400 V.