STW65N045M9-4 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.61 EUR |
| 10+ | 13.34 EUR |
| 120+ | 11.13 EUR |
| 510+ | 9.9 EUR |
| 1020+ | 8.82 EUR |
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Technische Details STW65N045M9-4 STMicroelectronics
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote STW65N045M9-4 nach Preis ab 18.72 EUR bis 23.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
| STW65N045M9-4 | STMicroelectronics |
 Description: N-CHANNEL 650 V, 39 MOHM TYP., 5Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-4 Vgs(th) (Max) @ Id: 4.2V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 650 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STW65N045M9-4 |
|
Hersteller: STMicroelectronics
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.45 EUR |
| 30+ | 18.72 EUR |