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STW65N045M9-4

STW65N045M9-4 STMicroelectronics

stw65n045m9-4.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.8 EUR
10+11.21 EUR
120+9.35 EUR
510+8.32 EUR
1020+7.41 EUR
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Technische Details STW65N045M9-4 STMicroelectronics

Description: N-CHANNEL 650 V, 39 MOHM TYP., 5, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247-4, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.

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STW65N045M9-4 Hersteller : STMicroelectronics stw65n045m9-4.pdf Description: N-CHANNEL 650 V, 39 MOHM TYP., 5
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 312W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.71 EUR
30+15.73 EUR
Im Einkaufswagen  Stück im Wert von  UAH