STW65N60DM6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 14.63 EUR |
| 10+ | 12.54 EUR |
| 100+ | 10.45 EUR |
| 600+ | 9.22 EUR |
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Technische Details STW65N60DM6 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A, Type of transistor: N-MOSFET, Technology: MDmesh™ DM6, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 29A, Pulsed drain current: 140A, Power dissipation: 368W, Case: TO247, Gate-source voltage: ±25V, On-state resistance: 71mΩ, Mounting: THT, Gate charge: 65.2nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STW65N60DM6 nach Preis ab 11.75 EUR bis 21.76 EUR
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STW65N60DM6 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET |
auf Bestellung 617 Stücke: Lieferzeit 14-28 Tag (e) |
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| STW65N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 140A Power dissipation: 368W Case: TO247 Gate-source voltage: ±25V On-state resistance: 71mΩ Mounting: THT Gate charge: 65.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| STW65N60DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 140A Power dissipation: 368W Case: TO247 Gate-source voltage: ±25V On-state resistance: 71mΩ Mounting: THT Gate charge: 65.2nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |