
STW65N65DM2AG STMicroelectronics

MOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ 60 A MDmesh DM2 Power MOSFET
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 17.07 EUR |
10+ | 17.05 EUR |
25+ | 10.47 EUR |
100+ | 9.06 EUR |
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Technische Details STW65N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STW65N65DM2AG nach Preis ab 8.87 EUR bis 17.71 EUR
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STW65N65DM2AG | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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STW65N65DM2AG | Hersteller : STMicroelectronics |
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STW65N65DM2AG | Hersteller : STMicroelectronics |
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STW65N65DM2AG | Hersteller : STMicroelectronics |
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STW65N65DM2AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 42mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 446W Gate charge: 0.12µC Gate-source voltage: ±25V Pulsed drain current: 240A Drain current: 38A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW65N65DM2AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 42mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 446W Gate charge: 0.12µC Gate-source voltage: ±25V Pulsed drain current: 240A Drain current: 38A |
Produkt ist nicht verfügbar |