STW65N65DM2AG STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 393 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 25.71 EUR |
| 30+ | 20.52 EUR |
| 120+ | 18.36 EUR |
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Technische Details STW65N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STW65N65DM2AG nach Preis ab 14.69 EUR bis 25.87 EUR
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STW65N65DM2AG | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 650 V, 42 mOhm typ 60 A MDmesh DM2 Power MOSFET |
auf Bestellung 500 Stücke: Lieferzeit 14-28 Tag (e) |
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| STW65N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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Trans MOSFET N-CH 650V 60A Automotive 3-Pin(3+Tab) TO-247 Tube |
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STW65N65DM2AG | Hersteller : STMicroelectronics |
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| STW65N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
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