STW70N60DM6-4 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO247-4 package
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.4 EUR |
| 10+ | 10.91 EUR |
| 100+ | 9.08 EUR |
| 600+ | 8.1 EUR |
| 1200+ | 7.22 EUR |
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Technische Details STW70N60DM6-4 STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V.
Weitere Produktangebote STW70N60DM6-4 nach Preis ab 11.23 EUR bis 15.67 EUR
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STW70N60DM6-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 390W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 220A Features of semiconductor devices: Kelvin terminal Version: ESD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STW70N60DM6-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 390W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 220A Features of semiconductor devices: Kelvin terminal Version: ESD |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW70N60DM6-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 62A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW70N60DM6-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 62A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW70N60DM6-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 62A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V |
Produkt ist nicht verfügbar |