STW70N60DM6-4 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Mounting: THT
Gate charge: 99nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: TO247-4
Pulsed drain current: 220A
Drain-source voltage: 600V
Drain current: 39A
On-state resistance: 42mΩ
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: ESD protected gate; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.12 EUR |
| 7+ | 11.15 EUR |
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Technische Details STW70N60DM6-4 STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V.
Weitere Produktangebote STW70N60DM6-4 nach Preis ab 11.15 EUR bis 32.55 EUR
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STW70N60DM6-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Mounting: THT Gate charge: 99nC Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247-4 Pulsed drain current: 220A Drain-source voltage: 600V Drain current: 39A On-state resistance: 42mΩ Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ESD protected gate; Kelvin terminal |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STW70N60DM6-4 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 36 mOhm typ 62 A MDmesh DM6 Power MOSFET |
auf Bestellung 58 Stücke: Lieferzeit 14-28 Tag (e) |
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| STW70N60DM6-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 62A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW70N60DM6-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 62A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW70N60DM6-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 62A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V |
Produkt ist nicht verfügbar |