STW70N60DM6-4 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO247-4 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.78 EUR |
| 10+ | 13.2 EUR |
| 100+ | 11 EUR |
| 600+ | 9.81 EUR |
| 1200+ | 9.03 EUR |
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Technische Details STW70N60DM6-4 STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 31A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V.
Weitere Produktangebote STW70N60DM6-4
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STW70N60DM6-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 390W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 99nC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Pulsed drain current: 220A Version: ESD Kind of package: tube |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STW70N60DM6-4 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 220A
Version: ESD
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Pulsed drain current: 220A
Version: ESD
Kind of package: tube
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)