STW70N60DM6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 36 mOhm typ., 62 A MDmesh DM6 Power MOSFET in a TO-247 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.41 EUR |
| 10+ | 11.9 EUR |
| 100+ | 9.72 EUR |
| 600+ | 8.07 EUR |
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Technische Details STW70N60DM6 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247, Gate-source voltage: ±25V, Gate charge: 99nC, On-state resistance: 36mΩ, Mounting: THT, Type of transistor: N-MOSFET, Drain current: 39A, Case: TO247, Pulsed drain current: 220A, Power dissipation: 390W, Drain-source voltage: 600V, Kind of package: tube, Kind of channel: enhancement, Polarisation: unipolar.
Weitere Produktangebote STW70N60DM6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STW70N60DM6 | STMicroelectronics |
Description: MOSFET N-CH 600V 62A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Supplier Device Package: TO-247-3 Part Status: Active Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW70N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247 Gate-source voltage: ±25V Gate charge: 99nC On-state resistance: 36mΩ Mounting: THT Type of transistor: N-MOSFET Drain current: 39A Case: TO247 Pulsed drain current: 220A Power dissipation: 390W Drain-source voltage: 600V Kind of package: tube Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STW70N60DM6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 62A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Supplier Device Package: TO-247-3
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STW70N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Gate-source voltage: ±25V
Gate charge: 99nC
On-state resistance: 36mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 39A
Case: TO247
Pulsed drain current: 220A
Power dissipation: 390W
Drain-source voltage: 600V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; Idm: 220A; 390W; TO247
Gate-source voltage: ±25V
Gate charge: 99nC
On-state resistance: 36mΩ
Mounting: THT
Type of transistor: N-MOSFET
Drain current: 39A
Case: TO247
Pulsed drain current: 220A
Power dissipation: 390W
Drain-source voltage: 600V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH