STW75N60M6 STMicroelectronics
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 12.25 EUR |
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Technische Details STW75N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 72A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V.
Weitere Produktangebote STW75N60M6 nach Preis ab 13.33 EUR bis 13.33 EUR
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STW75N60M6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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STW75N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 202 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW75N60M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 72A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW75N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW75N60M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 72A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW75N60M6 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 32 mOhm typ 72 A MDmesh M6 Power MOSFET |
Produkt ist nicht verfügbar |
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STW75N60M6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 45A; Idm: 288A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 288A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |