STW75N65DM6-4 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package
| Anzahl | Preis |
|---|---|
| 1+ | 23.83 EUR |
| 10+ | 17.97 EUR |
| 120+ | 14.54 EUR |
| 510+ | 13.06 EUR |
| 1020+ | 13.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STW75N65DM6-4 STMicroelectronics
Description: N-CHANNEL 650 V, 33 MOHM TYP., 7, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V.
Weitere Produktangebote STW75N65DM6-4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STW75N65DM6-4 | Hersteller : STMicroelectronics |
Description: N-CHANNEL 650 V, 33 MOHM TYP., 7 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 37.5A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| STW75N65DM6-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 47A; Idm: 280A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 47A Pulsed drain current: 280A Power dissipation: 480W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 36mΩ Mounting: THT Gate charge: 118nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |