auf Bestellung 600 Stücke:
Lieferzeit 126-140 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.42 EUR |
| 25+ | 12.25 EUR |
| 100+ | 10.5 EUR |
| 250+ | 9.33 EUR |
| 600+ | 7.8 EUR |
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Technische Details STW7N95K3 STMicroelectronics
Description: MOSFET N-CH 950V 7.2A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V.
Weitere Produktangebote STW7N95K3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| STW7N95K3 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 950V 7.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW7N95K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 950V 7.2A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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STW7N95K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 4.5A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STW7N95K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 950V 7.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V |
Produkt ist nicht verfügbar |
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STW7N95K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 4.5A; 150W Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 4.5A Power dissipation: 150W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |