STW88N65M5-4 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 packag
| Anzahl | Preis |
|---|---|
| 1+ | 25.03 EUR |
| 10+ | 17.18 EUR |
| 100+ | 14.87 EUR |
| 600+ | 14.56 EUR |
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Technische Details STW88N65M5-4 STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V.
Weitere Produktangebote STW88N65M5-4 nach Preis ab 13.81 EUR bis 25.54 EUR
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STW88N65M5-4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 84A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V |
auf Bestellung 594 Stücke: Lieferzeit 10-14 Tag (e) |
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STW88N65M5-4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 84A 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STW88N65M5-4 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 50.5A; Idm: 336A; 450W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.5A Power dissipation: 450W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 204nC Features of semiconductor devices: Kelvin terminal Pulsed drain current: 336A |
Produkt ist nicht verfügbar |