STWA12N120K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 1200V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 29.41 EUR |
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Technische Details STWA12N120K5 STMicroelectronics
Description: MOSFET N-CH 1200V 12A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V.
Weitere Produktangebote STWA12N120K5
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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STWA12N120K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) TO-247 Tube |
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| STWA12N120K5 | Hersteller : STMicroelectronics |
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| STWA12N120K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Gate charge: 44.2nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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STWA12N120K5 | Hersteller : STMicroelectronics |
MOSFET N-channel 1200 V, 0.62 Ohm typ 12 A MDmesh K5 Power MOSFET in TO-247 long leads |
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| STWA12N120K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 1.2kV; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 7.6A Pulsed drain current: 48A Power dissipation: 250W Case: TO247 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: THT Gate charge: 44.2nC Kind of package: tube Kind of channel: enhanced |
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