Produkte > STMICROELECTRONICS > STWA30N65DM6AG
STWA30N65DM6AG

STWA30N65DM6AG STMicroelectronics


stwa30n65dm6ag.pdf Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 650V, 90 mOhm 28A MDmesh DM6 Power MOSFET
auf Bestellung 382 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.84 EUR
10+8.82 EUR
25+5.51 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STWA30N65DM6AG STMicroelectronics

Description: MOSFET N-CH 650V 28A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 284W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote STWA30N65DM6AG nach Preis ab 5.31 EUR bis 8.85 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STWA30N65DM6AG STWA30N65DM6AG Hersteller : STMicroelectronics stwa30n65dm6ag.pdf Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 284W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.85 EUR
30+5.31 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STWA30N65DM6AG Hersteller : STMicroelectronics stwa30n65dm6ag.pdf Trans MOSFET N-CH 650V 28A Automotive 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STWA30N65DM6AG Hersteller : STMicroelectronics stwa30n65dm6ag.pdf Trans MOSFET N-CH 650V 28A Automotive 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STWA30N65DM6AG Hersteller : STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B731896E80D2&compId=stwa30n65dm6ag.pdf?ci_sign=394591d0d5735eb5b38470e2ecde6cf64c427926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 284W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STWA30N65DM6AG Hersteller : STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9B731896E80D2&compId=stwa30n65dm6ag.pdf?ci_sign=394591d0d5735eb5b38470e2ecde6cf64c427926 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 112A
Power dissipation: 284W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH