
STWA30N65DM6AG STMicroelectronics

MOSFETs Automotive-grade N-channel 650V, 90 mOhm 28A MDmesh DM6 Power MOSFET
auf Bestellung 382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 8.84 EUR |
10+ | 8.82 EUR |
25+ | 5.51 EUR |
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Technische Details STWA30N65DM6AG STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V, Power Dissipation (Max): 284W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STWA30N65DM6AG nach Preis ab 5.31 EUR bis 8.85 EUR
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STWA30N65DM6AG | Hersteller : STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V Power Dissipation (Max): 284W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-247 Long Leads Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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STWA30N65DM6AG | Hersteller : STMicroelectronics |
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STWA30N65DM6AG | Hersteller : STMicroelectronics |
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STWA30N65DM6AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 112A Power dissipation: 284W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA30N65DM6AG | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 112A Power dissipation: 284W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |