STWA40N95DK5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CHANNEL 950V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 100 V
auf Bestellung 363 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 39.47 EUR |
| 10+ | 34.77 EUR |
| 100+ | 30.07 EUR |
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Technische Details STWA40N95DK5 STMicroelectronics
Description: MOSFET N-CHANNEL 950V 38A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 100 V.
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| STWA40N95DK5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 24A Pulsed drain current: 152A Power dissipation: 450W Case: TO247 Gate-source voltage: ±30V On-state resistance: 120mΩ Mounting: THT Gate charge: 100nC Kind of package: tube Kind of channel: enhanced |
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| STWA40N95DK5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 950V; 24A; Idm: 152A; 450W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 950V Drain current: 24A Pulsed drain current: 152A Power dissipation: 450W Case: TO247 Gate-source voltage: ±30V On-state resistance: 120mΩ Mounting: THT Gate charge: 100nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |