STWA48N60DM2 STMicroelectronics
auf Bestellung 600 Stücke:
Lieferzeit 503-517 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.05 EUR |
| 10+ | 20.59 EUR |
| 100+ | 17.16 EUR |
| 250+ | 16.07 EUR |
| 600+ | 14.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STWA48N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V.
Weitere Produktangebote STWA48N60DM2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
STWA48N60DM2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|
| STWA48N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 40A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
||
 |
STWA48N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 25A; Idm: 160A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
STWA48N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Long Leads Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
STWA48N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 25A; Idm: 160A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Pulsed drain current: 160A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 79mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |