STWA50N65DM2AG STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 38A TO247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details STWA50N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 38A TO247, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STWA50N65DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STWA50N65DM2AG | STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| STWA50N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 69nC Kind of package: tube Drain-source voltage: 650V Application: automotive industry Gate-source voltage: ±25V On-state resistance: 70mΩ Pulsed drain current: 110A Polarisation: unipolar Technology: MDmesh™ DM2 Drain current: 24A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STWA50N65DM2AG |
|
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STWA50N65DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A
Type of transistor: N-MOSFET
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Drain-source voltage: 650V
Application: automotive industry
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Pulsed drain current: 110A
Polarisation: unipolar
Technology: MDmesh™ DM2
Drain current: 24A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A
Type of transistor: N-MOSFET
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Drain-source voltage: 650V
Application: automotive industry
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Pulsed drain current: 110A
Polarisation: unipolar
Technology: MDmesh™ DM2
Drain current: 24A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH