STWA50N65DM2AG STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 38A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Qualification: AEC-Q101
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Technische Details STWA50N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 38A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STWA50N65DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STWA50N65DM2AG | STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
STWA50N65DM2AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Power dissipation: 300W Case: TO247 Mounting: THT Kind of package: tube Application: automotive industry Gate-source voltage: ±25V On-state resistance: 70mΩ Pulsed drain current: 110A Gate charge: 69nC Polarisation: unipolar Drain current: 24A Kind of channel: enhancement Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STWA50N65DM2AG |
|
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STWA50N65DM2AG |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 300W
Case: TO247
Mounting: THT
Kind of package: tube
Application: automotive industry
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Pulsed drain current: 110A
Gate charge: 69nC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 300W
Case: TO247
Mounting: THT
Kind of package: tube
Application: automotive industry
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Pulsed drain current: 110A
Gate charge: 69nC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH