STWA50N65DM2AG STMicroelectronics

Description: MOSFET N-CH 650V 38A TO247, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.