STWA50N65DM2AG STMicroelectronics
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Technische Details STWA50N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 38A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STWA50N65DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STWA50N65DM2AG | Hersteller : STMicroelectronics |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 69nC Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 110A Drain-source voltage: 650V Drain current: 24A On-state resistance: 70mΩ Application: automotive industry Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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STWA50N65DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 38A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| STWA50N65DM2AG | Hersteller : STMicroelectronics |
MOSFETs Automotive-grade N-channel 650 V, 0.070 Ohm typ 38 A MDmesh DM2 Power MOSFET |
Produkt ist nicht verfügbar |
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| STWA50N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 69nC Kind of package: tube Technology: MDmesh™ DM2 Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: 110A Drain-source voltage: 650V Drain current: 24A On-state resistance: 70mΩ Application: automotive industry Polarisation: unipolar |
Produkt ist nicht verfügbar |