Technische Details STWA50N65DM2AG STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A, Type of transistor: N-MOSFET, Technology: MDmesh™ DM2, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 24A, Pulsed drain current: 110A, Power dissipation: 300W, Case: TO247, Gate-source voltage: ±25V, On-state resistance: 70mΩ, Mounting: THT, Gate charge: 69nC, Kind of package: tube, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STWA50N65DM2AG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STWA50N65DM2AG | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 38A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STWA50N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 110A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA50N65DM2AG | Hersteller : STMicroelectronics | Description: POWER TRANSISTORS |
Produkt ist nicht verfügbar |
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| STWA50N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 24A; Idm: 110A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 110A Power dissipation: 300W Case: TO247 Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |