Technische Details STWA57N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V.
Weitere Produktangebote STWA57N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STWA57N65M5 | STMicroelectronics |
 Description: MOSFET N-CH 650V 42A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STWA57N65M5 | STMicroelectronics |
MOSFETs N-Ch 650 V 0.056 Ohm 42 A Mdmesh |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STWA57N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 26.5A Pulsed drain current: 168A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 63mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STWA57N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STWA57N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 V 0.056 Ohm 42 A Mdmesh
MOSFETs N-Ch 650 V 0.056 Ohm 42 A Mdmesh
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STWA57N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 26.5A; Idm: 168A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26.5A
Pulsed drain current: 168A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 63mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH