STWA63N65DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 29.46 EUR |
| 10+ | 25.95 EUR |
| 100+ | 22.44 EUR |
| 500+ | 20.34 EUR |
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Technische Details STWA63N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V.
Weitere Produktangebote STWA63N65DM2 nach Preis ab 22.83 EUR bis 32.97 EUR
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| STWA63N65DM2 | Hersteller : STMicroelectronics |
MOSFET N-channel 650 V, 0.042 Ohm typ 60 A MDmesh DM2 Power MOSFET |
auf Bestellung 11 Stücke: Lieferzeit 14-28 Tag (e) |
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STWA63N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247 Kind of package: tube Mounting: THT Drain-source voltage: 650V Drain current: 60A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA63N65DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 60A; 446W; TO247 Kind of package: tube Mounting: THT Drain-source voltage: 650V Drain current: 60A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 446W Polarisation: unipolar Technology: MDmesh™ DM2 Kind of channel: enhanced Gate-source voltage: ±25V Case: TO247 |
Produkt ist nicht verfügbar |