STWA63N65DM2 STMicroelectronics

Description: MOSFET N-CH 650V 60A TO247, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 446W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V.