STWA63N65DM2 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 22.32 EUR |
| 10+ | 20.52 EUR |
| 25+ | 19.66 EUR |
| 100+ | 17.32 EUR |
| 600+ | 15.47 EUR |
| 1200+ | 15.45 EUR |
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Technische Details STWA63N65DM2 STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 Long Leads, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 446W (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V.
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STWA63N65DM2 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 60A TO247Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Long Leads Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 446W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V |
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