STWA65N65DM2AG STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in
auf Bestellung 524 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.65 EUR |
| 10+ | 8.59 EUR |
| 100+ | 7.92 EUR |
| 600+ | 7.44 EUR |
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Technische Details STWA65N65DM2AG STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 Long Leads, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STWA65N65DM2AG nach Preis ab 7.91 EUR bis 11.84 EUR
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STWA65N65DM2AG | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 60A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Long Leads Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 328 Stücke: Lieferzeit 10-14 Tag (e) |
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| STWA65N65DM2AG | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 60A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| STWA65N65DM2AG | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 38A; Idm: 240A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 650V Case: TO247 On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 240A Application: automotive industry Gate-source voltage: ±25V Gate charge: 0.12µC Drain current: 38A Power dissipation: 446W |
Produkt ist nicht verfügbar |