STWA68N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V
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Technische Details STWA68N60M6 STMicroelectronics
Description: MOSFET N-CH 600V 63A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 63A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-247 Long Leads, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V.
Weitere Produktangebote STWA68N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STWA68N60M6 | STMicroelectronics |
MOSFETs N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STWA68N60M6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 40A; Idm: 252A Type of transistor: N-MOSFET Technology: MDmesh™ M6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Pulsed drain current: 252A Power dissipation: 390W Case: TO247 Gate-source voltage: ±25V On-state resistance: 41mΩ Mounting: THT Gate charge: 106nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STWA68N60M6 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead
MOSFETs N-channel 600 V, 35 mOhm typ., 63 A MDmesh M6 Power MOSFET in a TO-247 long lead
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STWA68N60M6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 40A; Idm: 252A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 40A; Idm: 252A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Pulsed drain current: 252A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH