STWA68N65DM6 STMicroelectronics
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Technische Details STWA68N65DM6 STMicroelectronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A, Kind of package: tube, Mounting: THT, Drain-source voltage: 650V, Drain current: 35A, On-state resistance: 51mΩ, Type of transistor: N-MOSFET, Power dissipation: 431W, Polarisation: unipolar, Gate charge: 80nC, Technology: MDmesh™ DM6, Kind of channel: enhanced, Gate-source voltage: ±25V, Pulsed drain current: 172A, Case: TO247, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STWA68N65DM6
Foto | Bezeichnung | Hersteller | Beschreibung |
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STWA68N65DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Kind of package: tube Mounting: THT Drain-source voltage: 650V Drain current: 35A On-state resistance: 51mΩ Type of transistor: N-MOSFET Power dissipation: 431W Polarisation: unipolar Gate charge: 80nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 172A Case: TO247 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STWA68N65DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 35A; Idm: 172A Kind of package: tube Mounting: THT Drain-source voltage: 650V Drain current: 35A On-state resistance: 51mΩ Type of transistor: N-MOSFET Power dissipation: 431W Polarisation: unipolar Gate charge: 80nC Technology: MDmesh™ DM6 Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: 172A Case: TO247 |
Produkt ist nicht verfügbar |