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STWA72N60DM2AG

STWA72N60DM2AG STMicroelectronics

stwa72n60dm2ag.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 Long Leads
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Qualification: AEC-Q101
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Technische Details STWA72N60DM2AG STMicroelectronics

Description: MOSFET N-CH 600V 66A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V, Power Dissipation (Max): 446W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247 Long Leads, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V, Qualification: AEC-Q101.

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STWA72N60DM2AG STMicroelectronics stwa72n60dm2ag.pdf MOSFETs Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A, MDmesh DM2 Power MOSFET in
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STWA72N60DM2AG STWA72N60DM2AG STMicroelectronics stwa72n60dm2ag.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Pulsed drain current: 220A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 600V
Application: automotive industry
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STWA72N60DM2AG stwa72n60dm2ag.pdf
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A, MDmesh DM2 Power MOSFET in
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STWA72N60DM2AG stwa72n60dm2ag.pdf
STWA72N60DM2AG
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 220A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Pulsed drain current: 220A
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 600V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH