STWA88N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 84A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 19.98 EUR |
| 30+ | 12.39 EUR |
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Technische Details STWA88N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V.
Weitere Produktangebote STWA88N65M5 nach Preis ab 12.99 EUR bis 20.17 EUR
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auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.5A Pulsed drain current: 336A Power dissipation: 450W Case: TO247 Gate-source voltage: ±25V On-state resistance: 29mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 50.5A; Idm: 336A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.5A Pulsed drain current: 336A Power dissipation: 450W Case: TO247 Gate-source voltage: ±25V On-state resistance: 29mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhancement |
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