STY105NM50N STMicroelectronics
auf Bestellung 600 Stücke:
Lieferzeit 126-140 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 59.93 EUR |
| 25+ | 49.66 EUR |
| 100+ | 46.54 EUR |
| 250+ | 41.29 EUR |
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Technische Details STY105NM50N STMicroelectronics
Description: MOSFET N-CH 500V 110A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MAX247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V.
Weitere Produktangebote STY105NM50N
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STY105NM50N | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 500V 110A 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STY105NM50N | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 110A 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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STY105NM50N | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 110A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MAX247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V |
Produkt ist nicht verfügbar |