STY130NF20D STMicroelectronics
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Technische Details STY130NF20D STMicroelectronics
Description: MOSFET N-CH 200V 130A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V, Power Dissipation (Max): 450W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MAX247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V.
Weitere Produktangebote STY130NF20D
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STY130NF20D | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 200V 130A 3-Pin Max247 Tube |
Produkt ist nicht verfügbar |
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STY130NF20D | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 200V 130A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 65A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MAX247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
Produkt ist nicht verfügbar |