STY139N65M5 STMicroelectronics
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 57.69 EUR |
25+ | 47.82 EUR |
100+ | 44.83 EUR |
600+ | 40.39 EUR |
1200+ | 39.93 EUR |
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Technische Details STY139N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 130A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: MAX247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 363 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 100 V.
Weitere Produktangebote STY139N65M5
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STY139N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 130A 3-Pin(3+Tab) Max247 Tube |
auf Bestellung 1321 Stücke: Lieferzeit 14-21 Tag (e) |
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STY139N65M5 Produktcode: 60140 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STY139N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 130A 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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STY139N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 78A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STY139N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 130A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 363 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 100 V |
Produkt ist nicht verfügbar |
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STY139N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 78A; 625W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 78A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±25V On-state resistance: 17mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |