STY145N65M5 STMicroelectronics
auf Bestellung 446 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 107.41 EUR |
| 25+ | 95.71 EUR |
| 100+ | 84.03 EUR |
| 250+ | 84.01 EUR |
| 1200+ | 82.34 EUR |
| 3000+ | 82.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STY145N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 138A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 138A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: MAX247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V.
Weitere Produktangebote STY145N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
STY145N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH Si 650V 138A 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
|
| STY145N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 138A 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
||
 |
STY145N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Power dissipation: 625W Polarisation: unipolar Technology: MDmesh™ V Features of semiconductor devices: ESD protected gate Drain current: 87A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: MAX247 On-state resistance: 15mΩ Gate-source voltage: ±25V Mounting: THT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
STY145N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 138A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 138A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
STY145N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 87A; 625W; MAX247 Power dissipation: 625W Polarisation: unipolar Technology: MDmesh™ V Features of semiconductor devices: ESD protected gate Drain current: 87A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Kind of package: tube Case: MAX247 On-state resistance: 15mΩ Gate-source voltage: ±25V Mounting: THT |
Produkt ist nicht verfügbar |