STY50N105DK5 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 42.03 EUR |
| 10+ | 27.16 EUR |
| 100+ | 27.02 EUR |
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Technische Details STY50N105DK5 STMicroelectronics
Description: MOSFET N-CH 1050V 44A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: MAX247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 100 V.
Weitere Produktangebote STY50N105DK5 nach Preis ab 26.09 EUR bis 42.26 EUR
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STY50N105DK5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1050V 44A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1050 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 100 V |
auf Bestellung 575 Stücke: Lieferzeit 10-14 Tag (e) |
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STY50N105DK5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 46A 3-Pin(3+Tab) Max247 Tube |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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| STY50N105DK5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 1.05KV 46A 3-Pin(3+Tab) Max247 Tube |
Produkt ist nicht verfügbar |
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| STY50N105DK5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 1050V; 46A; 625W Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 46A Power dissipation: 625W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |