STY60NM60 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 60A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 979 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 53.56 EUR |
| 30+ | 44.41 EUR |
| 120+ | 41.63 EUR |
| 510+ | 35.53 EUR |
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Technische Details STY60NM60 STMicroelectronics
Description: MOSFET N-CH 600V 60A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: MAX247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.
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