STY60NM60 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 5+ | 38.39 EUR |
| 10+ | 33.02 EUR |
| 25+ | 29.48 EUR |
| 30+ | 27.61 EUR |
| 50+ | 25.93 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
5 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details STY60NM60 STMicroelectronics
Description: MOSFET N-CH 600V 60A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V, Power Dissipation (Max): 560W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: MAX247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V.
Weitere Produktangebote STY60NM60 nach Preis ab 25.86 EUR bis 46.39 EUR
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STY60NM60 | STMicroelectronics |
 Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) Max247 Tube |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
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STY60NM60 | STMicroelectronics |
Description: MOSFET N-CH 600V 60A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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STY60NM60 | STMicroelectronics |
MOSFETs N-Ch 600 Volt 60 Amp |
auf Bestellung 191 Stücke: Lieferzeit 10-14 Tag (e) |
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STY60NM60 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 37.8A Power dissipation: 460W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A Version: ESD |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STY60NM60 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) Max247 Tube
Trans MOSFET N-CH 600V 60A 3-Pin(3+Tab) Max247 Tube
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 38.39 EUR |
| 10+ | 33.76 EUR |
| 25+ | 30.61 EUR |
| 30+ | 29.16 EUR |
| 50+ | 28.08 EUR |
| STY60NM60 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 60A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 600V 60A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.18 EUR |
| 30+ | 29.5 EUR |
| 60+ | 27.52 EUR |
| 120+ | 25.86 EUR |
| STY60NM60 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 600 Volt 60 Amp
MOSFETs N-Ch 600 Volt 60 Amp
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 46.39 EUR |
| 10+ | 29.87 EUR |
| STY60NM60 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.8A
Power dissipation: 460W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.8A; Idm: 60A; 460W; MAX247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.8A
Power dissipation: 460W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Version: ESD
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)