STY80NM60N

STY80NM60N STMicroelectronics


818748047593694cd00177906.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 74A 3-Pin(3+Tab) Max247 Tube
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Technische Details STY80NM60N STMicroelectronics

Description: MOSFET N-CH 600V 74A MAX247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V, Power Dissipation (Max): 447W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MAX247™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V.

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STY80NM60N Hersteller : STMicroelectronics 818748047593694cd00177906.pdf Trans MOSFET N-CH 600V 74A 3-Pin(3+Tab) Max247 Tube
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STY80NM60N STY80NM60N Hersteller : STMicroelectronics STY80NM60N.pdf Description: MOSFET N-CH 600V 74A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Power Dissipation (Max): 447W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MAX247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
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STY80NM60N STY80NM60N Hersteller : STMicroelectronics sty80nm60n-957063.pdf MOSFET N-channel 600 V, 74A Power II Mdmesh
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