SUD09P10-195-BE3 Vishay Siliconix

Description: MOSFET P-CH 100V 8.8A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).