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SUD09P10-195-BE3

SUD09P10-195-BE3 Vishay Siliconix

SUD09P10.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 8.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
auf Bestellung 1974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
13+1.36 EUR
100+1.06 EUR
500+0.88 EUR
1000+0.69 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SUD09P10-195-BE3 Vishay Siliconix

Description: MOSFET P-CH 100V 8.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V.

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SUD09P10-195-BE3 SUD09P10-195-BE3 Hersteller : Vishay / Siliconix SUD09P10.pdf MOSFETs TO252 100V 8.8A P-CH MOSFET
auf Bestellung 133215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.17 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.61 EUR
2000+0.58 EUR
4000+0.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SUD09P10-195-BE3 Hersteller : Vishay sud09p10.pdf Trans MOSFET P-CH 100V 8.8A 4-Pin(3+Tab) TO-252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUD09P10-195-BE3 Hersteller : VISHAY SUD09P10.pdf SUD09P10-195-BE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUD09P10-195-BE3 Hersteller : Vishay sud09p10.pdf Trans MOSFET P-CH 100V 8.8A 4-Pin(3+Tab) TO-252
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SUD09P10-195-BE3 SUD09P10-195-BE3 Hersteller : Vishay Siliconix SUD09P10.pdf Description: MOSFET P-CH 100V 8.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 3.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 32.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1055 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH