SUD19P06-60L-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 19A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.89 EUR |
| 4000+ | 0.83 EUR |
| 6000+ | 0.80 EUR |
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Technische Details SUD19P06-60L-E3 Vishay Siliconix
Description: MOSFET P-CH 60V 19A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 2.7W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V.
Weitere Produktangebote SUD19P06-60L-E3 nach Preis ab 0.57 EUR bis 3.12 EUR
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SUD19P06-60L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK |
auf Bestellung 2770 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD19P06-60L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK |
auf Bestellung 2770 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD19P06-60L-E3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 66273 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD19P06-60L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 19A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
auf Bestellung 21277 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD19P06-60L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 1630 Stücke: Lieferzeit 21-28 Tag (e) |
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SUD19P06-60L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SUD19P06-60L-E3 | Hersteller : VISHAY |
SUD19P06-60L-E3 SMD P channel transistors |
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