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Technische Details SUD19P06-60L-E3 Vishay / Siliconix
Description: MOSFET P-CH 60V 19A TO252, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.7W (Ta), 46W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V.
Weitere Produktangebote SUD19P06-60L-E3 nach Preis ab 0.8 EUR bis 3.12 EUR
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SUD19P06-60L-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 60V 19A TO252Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD19P06-60L-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 19A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 2.7W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V |
auf Bestellung 21277 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUD19P06-60L-E3 |
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auf Bestellung 1630 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SUD19P06-60L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 19A TO252
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Description: MOSFET P-CH 60V 19A TO252
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.89 EUR |
| 4000+ | 0.83 EUR |
| 6000+ | 0.8 EUR |
| SUD19P06-60L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
Description: MOSFET P-CH 60V 19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 21277 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.12 EUR |
| 10+ | 1.98 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.97 EUR |
| SUD19P06-60L-E3 |
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auf Bestellung 1630 Stücke:
Lieferzeit 21-28 Tag (e)