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SUD19P06-60L-E3

SUD19P06-60L-E3 Vishay Siliconix


sud19p06.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 19A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.85 EUR
Mindestbestellmenge: 2000
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Technische Details SUD19P06-60L-E3 Vishay Siliconix

Description: MOSFET P-CH 60V 19A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 2.7W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V.

Weitere Produktangebote SUD19P06-60L-E3 nach Preis ab 0.6 EUR bis 3.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SUD19P06-60L-E3 SUD19P06-60L-E3 Hersteller : Vishay sud19p06.pdf Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
100+1.57 EUR
101+ 1.5 EUR
131+ 1.11 EUR
250+ 1.06 EUR
500+ 0.86 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 100
SUD19P06-60L-E3 SUD19P06-60L-E3 Hersteller : Vishay sud19p06.pdf Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK
auf Bestellung 2820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
81+1.93 EUR
100+ 1.52 EUR
101+ 1.44 EUR
131+ 1.07 EUR
250+ 1.02 EUR
500+ 0.82 EUR
1000+ 0.6 EUR
Mindestbestellmenge: 81
SUD19P06-60L-E3 SUD19P06-60L-E3 Hersteller : Vishay Siliconix sud19p06.pdf Description: MOSFET P-CH 60V 19A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
auf Bestellung 21426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.06 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
Mindestbestellmenge: 9
SUD19P06-60L-E3 SUD19P06-60L-E3 Hersteller : Vishay / Siliconix sud19p06.pdf MOSFET 60V 19A 46W 60mohm @ 10V
auf Bestellung 47654 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+3.04 EUR
21+ 2.49 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.36 EUR
Mindestbestellmenge: 18
SUD19P06-60L-E3 sud19p06.pdf
auf Bestellung 1630 Stücke:
Lieferzeit 21-28 Tag (e)
SUD19P06-60L-E3 SUD19P06-60L-E3 Hersteller : Vishay sud19p06.pdf Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
SUD19P06-60L-E3 SUD19P06-60L-E3 Hersteller : Vishay sud19p06.pdf Trans MOSFET P-CH 60V 19A 3-Pin(2+Tab) DPAK
Produkt ist nicht verfügbar
SUD19P06-60L-E3 Hersteller : VISHAY sud19p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -19A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19A
Pulsed drain current: -30A
Power dissipation: 46W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
SUD19P06-60L-E3 Hersteller : VISHAY sud19p06.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -19A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19A
Pulsed drain current: -30A
Power dissipation: 46W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar