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SUD20N10-66L-BE3

SUD20N10-66L-BE3 Vishay Siliconix

sud20n10-66l.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
15+1.20 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
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Technische Details SUD20N10-66L-BE3 Vishay Siliconix

Description: MOSFET N-CH 100V 16.9A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V, Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V.

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SUD20N10-66L-BE3 SUD20N10-66L-BE3 Hersteller : Vishay / Siliconix sud20n10-66l.pdf MOSFETs TO252 100V 35A N-CH MOSFET
auf Bestellung 19800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.26 EUR
100+0.84 EUR
500+0.67 EUR
1000+0.61 EUR
4000+0.50 EUR
10000+0.48 EUR
Mindestbestellmenge: 2
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SUD20N10-66L-BE3 SUD20N10-66L-BE3 Hersteller : Vishay Siliconix sud20n10-66l.pdf Description: MOSFET N-CH 100V 16.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.1W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 50 V
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