Weitere Produktangebote SUD23N06-31L-E3 nach Preis ab 0.61 EUR bis 1.76 EUR
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SUD23N06-31-BE3 | Hersteller : Vishay / Siliconix |
 MOSFETs N-CHANNEL 60V (D-S) |
auf Bestellung 26669 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD23N06-31L-E3 | Hersteller : Vishay / Siliconix |
MOSFET 60V 23A 100W |
auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD23N06-31-BE3 | Hersteller : VISHAY |
Description: VISHAY - SUD23N06-31-BE3 - MOSFET, N-CH, 60V, 21.4A, TO-252 tariffCode: 0 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 0 Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD23N06-31L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
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| SUD23N06-31-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 21.4A 4-Pin(3+Tab) TO-252 |
Produkt ist nicht verfügbar |
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SUD23N06-31-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |
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SUD23N06-31-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 9.1A/21.4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 21.4A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
Produkt ist nicht verfügbar |