SUD50N03-06AP-T4E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 10W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Technische Details SUD50N03-06AP-T4E3 Vishay Siliconix
Description: MOSFET N-CH 30V 90A TO252, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 10W (Ta), 83W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).