SUD50P10-43L-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 9.2A/37.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 1780 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.51 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.36 EUR |
| 500+ | 2.03 EUR |
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Technische Details SUD50P10-43L-BE3 Vishay Siliconix
Description: MOSFET P-CH 100V 9.2A/37.1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37.1A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V, Power Dissipation (Max): 8.3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V.
Weitere Produktangebote SUD50P10-43L-BE3 nach Preis ab 1.87 EUR bis 4.63 EUR
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SUD50P10-43L-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs TO252 100V 37.1A P-CH MOSFET |
auf Bestellung 20652 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUD50P10-43L-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) TO-252AA T/R |
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SUD50P10-43L-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 9.2A/37.1A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 37.1A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
Produkt ist nicht verfügbar |