SUD50P10-43L-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 100V 37.1A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V
Power Dissipation (Max): 8.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 1.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUD50P10-43L-E3 Vishay Siliconix
Description: MOSFET P-CH 100V 37.1A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V, Power Dissipation (Max): 8.3W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V.
Weitere Produktangebote SUD50P10-43L-E3 nach Preis ab 1.36 EUR bis 3.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SUD50P10-43L-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -37.1A; 95W Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -37.1A Pulsed drain current: -40A Gate charge: 160nC On-state resistance: 43mΩ Gate-source voltage: ±20V Power dissipation: 95W Kind of package: reel; tape Case: DPAK; TO252 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1450 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
SUD50P10-43L-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -37.1A; 95W Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -37.1A Pulsed drain current: -40A Gate charge: 160nC On-state resistance: 43mΩ Gate-source voltage: ±20V Power dissipation: 95W Kind of package: reel; tape Case: DPAK; TO252 |
auf Bestellung 1450 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SUD50P10-43L-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V 37A 136W 43mohm @ 10V |
auf Bestellung 23642 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SUD50P10-43L-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 37.1A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37.1A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 9.2A, 10V Power Dissipation (Max): 8.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
auf Bestellung 10189 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SUD50P10-43L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
 |
SUD50P10-43L-E3 | Hersteller : VISHAY |
Description: VISHAY - SUD50P10-43L-E3 - Leistungs-MOSFET, p-Kanal, 100 V, 38 A, 0.043 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 38A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.043ohm SVHC: Lead (21-Jan-2025) |
auf Bestellung 15702 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
SUD50P10-43L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
 |
SUD50P10-43L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 8.2A 3-Pin(2+Tab) DPAK |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
| SUD50P10-43L-E3 | Hersteller : Vishay |
Trasistor P-MOSFET; 100V; 20V; 48mOhm; 37,1A; 136W; -55°C ~ 175°C; Substitute: SUD50P10-43L-GE3; SUD50P10-43L-E3; SUD50P10-43L TSUD50P10-43L |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
||||||||||||||||
|
|
SUD50P10-43L-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |