SUD70090E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.64 EUR |
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Technische Details SUD70090E-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 50A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V.
Weitere Produktangebote SUD70090E-GE3 nach Preis ab 1.15 EUR bis 3.67 EUR
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SUD70090E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD70090E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUD70090E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V |
auf Bestellung 3958 Stücke: Lieferzeit 21-28 Tag (e) |
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SUD70090E-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 100V Vds 20V Vgs DPAK (TO-252) |
auf Bestellung 21705 Stücke: Lieferzeit 978-992 Tag (e) |
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SUD70090E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SUD70090E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Power dissipation: 125W Case: TO252 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 50A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| SUD70090E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Power dissipation: 125W Case: TO252 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Drain-source voltage: 100V Drain current: 50A On-state resistance: 9.3mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |