| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.46 EUR |
| 10+ | 1.34 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.68 EUR |
| 2000+ | 0.58 EUR |
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Technische Details SUD80460E-BE3 Vishay / Siliconix
Description: MOSFET N-CH 150V 42A TO252AA, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 65.2W (Tc), Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube.
Weitere Produktangebote SUD80460E-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SUD80460E-BE3 | Vishay Siliconix |
 Description: MOSFET N-CH 150V 42A TO252AAInput Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 65.2W (Tc) Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SUD80460E-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 42A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Description: MOSFET N-CH 150V 42A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65.2W (Tc)
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH