auf Bestellung 21963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.80 EUR |
| 10+ | 1.38 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.65 EUR |
| 2000+ | 0.62 EUR |
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Technische Details SUD80460E-BE3 Vishay / Siliconix
Description: MOSFET N-CH 150V 42A TO252AA, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V, Power Dissipation (Max): 65.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V.
Weitere Produktangebote SUD80460E-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SUD80460E-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 42A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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SUD80460E-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 42A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V Power Dissipation (Max): 65.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
Produkt ist nicht verfügbar |