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SUD90330E-BE3

SUD90330E-BE3 Vishay Siliconix

sud90330e.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.92 EUR
4000+0.86 EUR
6000+0.85 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SUD90330E-BE3 Vishay Siliconix

Description: MOSFET N-CH 200V 35.8A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc), Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V.

Weitere Produktangebote SUD90330E-BE3 nach Preis ab 0.89 EUR bis 3.15 EUR

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SUD90330E-BE3 SUD90330E-BE3 Hersteller : Vishay / Siliconix sud90330e.pdf MOSFETs N-CHANNEL 200V (D-S)
auf Bestellung 26721 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
10+1.97 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.03 EUR
2000+0.92 EUR
4000+0.89 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SUD90330E-BE3 SUD90330E-BE3 Hersteller : Vishay Siliconix sud90330e.pdf Description: MOSFET N-CH 200V 35.8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.8A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V
auf Bestellung 6705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.02 EUR
100+1.37 EUR
500+1.09 EUR
1000+1.04 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH