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Technische Details SUM110N10-09-E3 Vishay
Description: MOSFET N-CH 100V 110A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.75W (Ta), 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V.
Weitere Produktangebote SUM110N10-09-E3 nach Preis ab 4.33 EUR bis 10.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SUM110N10-09-E3 | Vishay |
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N10-09-E3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N10-09-E3 | Vishay / Siliconix |
MOSFETs 100V 110A 375W |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| SUM110N10-09-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 5.07 EUR |
| SUM110N10-09-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 87A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 87A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| SUM110N10-09-E3 |
![]() |
Hersteller: Vishay / Siliconix
MOSFETs 100V 110A 375W
MOSFETs 100V 110A 375W
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.64 EUR |
| 10+ | 6.97 EUR |
| 100+ | 5.45 EUR |
| 500+ | 4.33 EUR |




